Comparison of Dopant and Oxygen Striations at the Same Point in Czochralski Silicon Crystals
- 1 November 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (11A) , L1388
- https://doi.org/10.1143/jjap.35.l1388
Abstract
Dopant and oxygen striations, and grown-in defect striations in Czochralski silicon crystals grown under long-period temperature fluctuations in the melt were measured at the exact same position in the crystal by spreading resistance measurement and an electron-beam-induced current method with Au diffusion, X-ray topography and micro-Fourier transform infrared spectroscopy, and an optical-precipitate-profiler (OPP) method, respectively. We observed that the rapid variations in dopant striations caused by remelting during crystal growth do not appear for oxygen striations. OPP defects were found to be distributed along the regions of the high oxygen concentration.Keywords
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