Single crystal growth of Si1 − Ge by the Czochralski technique
- 22 September 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 166 (1-4) , 657-662
- https://doi.org/10.1016/0022-0248(96)00036-x
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Optical determination of the composition of bulk SiGe monocrystalsMaterials Science and Engineering: B, 1994
- Czochralski growth of SitGe1-x single crystalsJournal of Crystal Growth, 1994
- Bridgman and Czochralski growth of Ge-Si alloy crystalsCrystal Research and Technology, 1994
- Electronic-band parameters in strained alloys on substratesPhysical Review B, 1993
- Novel development of the weighing method for automatic Czochralski crystal growth of semiconductorsJournal of Crystal Growth, 1993
- Servo-controlled crystal growth by the Czochralski method estimating the state vector of the controlled objectJournal of Crystal Growth, 1992
- Si-Ge solid solution single crystal growth by electron beam floating zone techniqueJournal of Crystal Growth, 1981
- The weighing method of automatic Czochralski crystal growthJournal of Crystal Growth, 1977
- The weighing method of automatic Czochralski crystal growthJournal of Crystal Growth, 1977
- Intrinsic Optical Absorption in Germanium-Silicon AlloysPhysical Review B, 1958