Growth pressure dependence of neighboring mask interference in densely arrayed narrow-stripe selective MOVPE for integrated photonic devices
- 31 December 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 221 (1-4) , 189-195
- https://doi.org/10.1016/s0022-0248(00)00684-9
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- 1.55-μm wavelength-selectable microarray DFB-LD's with monolithically integrated MMI combiner, SOA, and EA-modulatorIEEE Photonics Technology Letters, 2000
- Densely arrayed eight-wavelength semiconductor lasers fabricated by microarray selective epitaxyIEEE Journal of Selected Topics in Quantum Electronics, 1999
- Narrow-stripe selective growth of high-quality MQWs by atmospheric-pressure MOVPEJournal of Crystal Growth, 1998
- Low threshold and high uniformity for novel 1.3-/spl mu/m-strained InGaAsP MQW DC-PBH LDs fabricated by the all-selective MOVPE techniqueIEEE Photonics Technology Letters, 1997
- Highly uniform InGaAsP growth by dual-fluid-layer structure metalorganic vapor phase epitaxy reactor with atmospheric pressureJournal of Crystal Growth, 1994
- Polarization-insensitive semiconductor optical amplifier array grown by selective MOVPEIEEE Photonics Technology Letters, 1994
- DFB-LD/modulator integrated light source by bandgap energy controlled selective MOVPEElectronics Letters, 1992