Highly uniform InGaAsP growth by dual-fluid-layer structure metalorganic vapor phase epitaxy reactor with atmospheric pressure
- 1 December 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4) , 622-629
- https://doi.org/10.1016/0022-0248(94)91117-7
Abstract
No abstract availableKeywords
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