Influence of gas mixing on the lateral uniformity in horizontal MOVPE reactors
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1) , 175-180
- https://doi.org/10.1016/0022-0248(91)90452-b
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- A new inlet area design for horizontal MOVPE reactorsJournal of Crystal Growth, 1989
- A parametric investigation of GaAs epitaxial growth uniformity in a high speed, rotating-disk MOCVD reactorJournal of Crystal Growth, 1988
- A novel MOVPE reactor with a rotating substrateJournal of Crystal Growth, 1988
- A new versatile, large size MOVPE reactorJournal of Crystal Growth, 1988
- MOCVD grown InP/InGaAs structures for optical receiversJournal of Crystal Growth, 1988
- Extremely uniform, reproducible growth of device quality InGaAsP:InP heterostructures in the T-shaped reactor at atmospheric pressureJournal of Crystal Growth, 1988
- A gas mixing device for MOCVDJournal of Crystal Growth, 1987
- High-reflectivity GaAs-AlGaAs mirrors: Sensitivity analysis with respect to epitaxial growth parametersJournal of Applied Physics, 1987