Abstract
A theory of ambipolar conduction of electricity is presented and applied specifically to non-degenerate semiconductors. Generalized flux—force relations are set up, and the flux (current density) for each of the two polarities of charge carrier is resolved into two fundamental components, one that contributes to the net current and another that is cancelled by a component of the carrier of opposite polarity. In conjunction with appropriate recombination and generation laws, the application of the continuity equations to each of the fluxes, expressed ns the sum of their fundamental components, supplies the necessary equations in the treatment of: ambipolar diffusion in uniform material, and in material with a discontinuity in the characteristic current; ambipolar diffusion through a p-n junction with both an Open and a closed circuit; the Peltier effect, electroluminescence, and rectification ; and Seebock and photovoltaic effects. The significance of the potential associated with the concentration product np is indicated.