Variations in Semiconductor Device Response in a Medium-Energy X-Ray Dose-Enhancing Environment
- 1 January 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 34 (6) , 1544-1550
- https://doi.org/10.1109/tns.1987.4337513
Abstract
We have performed a series of experiments to investigate the response of semiconductor devices to medium-energy x-ray irradiation under conditions in which dose-enhancement effects are very important. We find that the response of MOS capacitors to the same "dose-enhanced" radiation depends not only on the increased dose, but also on the incident radiation spectra, device temperature and processing, and/or oxide thickness and electric field. In many cases, these dependencies cannot be explained simply in terms of existing knowledge of basic mechanisms of radiation effects on MOS devices (for example, electron-hole recombination and hole transport and trapping), or by present Monte Carlo electron/photon transport codes such as the Integrated Tiger Series (ITS). In addition, the response of semiconductor diodes to the "dose-enhanced" radiation appears to be qualitatively different from that of MOS capacitors, and differs markedly in value from the ITS code predictions. These results demonstrate that an improved understanding of semiconductor device response to "enhanced" radiation is needed to assure simulation fidelity of tests of devices to be used in dose-enhancing environments.Keywords
This publication has 16 references indexed in Scilit:
- Using a 10-keV X-Ray Source for Hardness AssuranceIEEE Transactions on Nuclear Science, 1986
- Experimental Verification of Non-Equilibrated Bremsstrahlung Dosimetry Predictions for 0.75 MeV ElectronsIEEE Transactions on Nuclear Science, 1986
- Defect Production in SiO2 by X-Ray and Co-60 RadiationsIEEE Transactions on Nuclear Science, 1985
- Experimental Check of Bremsstrahlung Dosimetry Predictions for 0.75 MeV ElectronsIEEE Transactions on Nuclear Science, 1985
- Accounting for Dose-Enhancement Effects with CMOS TransistorsIEEE Transactions on Nuclear Science, 1985
- Radiation effects in TaSix/polysilicon MOS gate structuresJournal of Vacuum Science & Technology B, 1984
- Correlating the Radiation Response of MOS Capacitors and TransistorsIEEE Transactions on Nuclear Science, 1984
- X-Ray Wafer Probe for Total Dose TestingIEEE Transactions on Nuclear Science, 1982
- Energy deposition by soft x-rays - an application to lithography for VLSIIEEE Transactions on Nuclear Science, 1979
- Role Transport and Charge Relaxation in Irradiated SiO2 MOS CapacitorsIEEE Transactions on Nuclear Science, 1975