Temperature gradients, dopants, and dislocation formation during low-pressure LEC growth of GaAs
- 1 November 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 85 (1-2) , 59-68
- https://doi.org/10.1016/0022-0248(87)90204-1
Abstract
No abstract availableKeywords
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