Growth Temperature Dependence of Disorderings in a Be-Doped GaAs/AlAs Multilayered Structure

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Abstract
The compositional disorderings of a GaAs/AlAs multilayered structure grown with molecular-beam epitaxy, selectively doped with Be in barrier layers, were studied. Using the depth profiles measured by means of secondary ion mass spectroscopy (SIMS), we investigated the mixing of Al and Ga during growth, the interdiffusion of these atoms during post growth annealing at 750°C, and the Be doping concentration dependence of those disorderings. The mixing during the growth was found to be strongly dependent on both the Be concentration and the substrate temperature. The multilayer which preserved the prescribed structure during growth were found to be stable through annealing; however, those slightly mixed during growth were found to be further disordered mainly in the first short annealing and a little thereafter.