Electroluminescence observation and x-ray topographic study of a nitrogen-doped GaP-LED
- 1 August 1976
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (8) , 3747-3748
- https://doi.org/10.1063/1.323141
Abstract
The lattice defects in nitrogen‐doped GaP light‐emitting diodes (LED’s) are investigated by taking an electroluminescence (EL) pattern and an x‐ray topograph of a small LED chip. The one‐to‐one correspondence between the dark lines in the EL pattern and the screw dislocations is obtained.This publication has 7 references indexed in Scilit:
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