Ar ion beam and CCl4 reactive ion etching: A comparison of etching damage and of damage passivation by hydrogen
- 1 December 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (11) , 4282-4291
- https://doi.org/10.1063/1.335513
Abstract
Damage produced in single‐crystal silicon by two distinctly different dry etching techniques, Ar ion beam etching and CCl4 reactive ion etching is characterized and compared using spectroscopic ellipsometry, reflected high‐ energy electron diffraction, and current‐voltage (I‐V) characteristics of Au contacts to the etched Si. Secondary ion mass spectroscopy is also used to further characterize the CCl4 exposed samples. The effectiveness of low‐energy hydrogen ion implants in passivating this dry etching induced damage is explored. The restoration of I‐V characteristics caused by H+ implants is correlated with the evolution of the spectroscopic ellipsometry, reflected high‐ energy electron diffraction, and secondary ion mass spectroscopy data.This publication has 10 references indexed in Scilit:
- High-barrier Schottky diodes on p-type silicon due to dry-etching damageIEEE Electron Device Letters, 1985
- Silicon damage caused by CCl4 reactive ion etching: Its characterization and removal by rapid thermal annealingJournal of Applied Physics, 1985
- Study of silicon contamination and near-surface damage caused by CF4/H2 reactive ion etchingApplied Physics Letters, 1984
- Ellipsometric Characterization of Si Surface Damage Induced by Sputter EtchingJournal of the Electrochemical Society, 1983
- Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etchingJournal of Vacuum Science & Technology A, 1983
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Effect of neutral ion beam sputtering and etching on siliconThin Solid Films, 1982
- An investigation of ion-bombarded and annealed 〈111〉 surfaces of Ge by spectroscopic ellipsometrySurface Science, 1980
- I n s i t u Auger electron spectroscopy of Si and SiO2 surfaces plasma etched in CF4-H2 glow dischargesJournal of Applied Physics, 1979
- Electroreflectance and ellipsometry of silicon from 3 to 6 eVPhysical Review B, 1978