Measurement of the Minority-Carrier Lifetime in a Semiconductor Wafer by a Two-Mercury-Probe Method and Its Application to Evaluation of the Surface Recombination Velocity
- 1 January 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (1A) , L162-165
- https://doi.org/10.1143/jjap.29.l162
Abstract
It is shown that the minority-carrier lifetime τ and diffusion coefficient D can be nondestructively evaluated by the two-mercury-probe method and analysis technique, even in the p-type silicon wafers with low resistivity. Furthermore, it is also demonstrated that the evaluation of the surface recombination velocity s and its dependence on the wafer surface conditions is possible by applying the developed measurement and analysis method.Keywords
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