Donage and in Situ Annealing During Ion Implantation
- 1 January 1982
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Damage induced through megavolt arsenic implantation into siliconApplied Physics Letters, 1982
- Displacement criterion for amorphization of silicon during ion implantationJournal of Applied Physics, 1981
- Transmission electron microscopy and Rutherford backscattering studies of different damage structures in P+ implanted SiJournal of Applied Physics, 1980
- Ion-beam induced epitaxy of siliconPhysics Letters A, 1979
- A model for the formation of amorphous Si by ion bombardmentRadiation Effects, 1970