Mass spectrometric study of the reaction of photo-oxidized GaAs with Ga

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Abstract
The Ga‐induced reaction of photo‐oxidized GaAs, which is used as a mask material for the in situ selective‐area growth of GaAs, has been studied by mass spectrometry. An anomalous behavior of photo‐oxidized GaAs was observed by measuring the temperature‐programmed desorption after Ga predeposition and the desorption response to pulsed Ga injection onto it. Deposited Ga, less than 3 monolayers, did not directly deoxidize the photo‐oxidized GaAs into a volatile product, but, on the contrary, stabilized it. This anomalous behavior was not observed for dark‐oxidized GaAs. It is considered that Ga‐induced stabilization of the oxide makes the photo‐oxidized GaAs more effective as a mask for selective‐area growth.