Infrared absorption of interstitial oxygen in silicon at low temperatures
- 1 July 1991
- journal article
- research article
- Published by Springer Nature in Applied Physics A
- Vol. 53 (1) , 20-25
- https://doi.org/10.1007/bf00323429
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Thermal double donors in siliconApplied Physics A, 1989
- Infrared spectrum of oxygen in siliconJournal of Applied Physics, 1987
- Determination of Oxygen in Silicon by Photon Activation Analysis for Calibration of the Infrared AbsorptionJournal of the Electrochemical Society, 1984
- Infrared spectrum of interstitial oxygen in siliconApplied Physics Letters, 1984
- DataPublished by Springer Nature ,1981
- Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°KSolid-State Electronics, 1973
- Absorption of oxygen in silicon in the near and the far infraredProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1970
- Infrared Absorption of Oxygen in SiliconPhysical Review B, 1957
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957
- Infrared Absorption and Oxygen Content in Silicon and GermaniumPhysical Review B, 1956