Infrared spectrum of oxygen in silicon
- 15 April 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (8) , 3114-3116
- https://doi.org/10.1063/1.337814
Abstract
Weak absorption bands appear at 1720, 1227, and 1013 cm−1 in the infrared spectrum of Czochralski silicon. A study of the stress-induced dichroism of these features has been performed to confirm assignment of these bands to combination and overtone modes of interstitial oxygen vibrations. We show that the 1720- and 1227-cm−1 bands involve the antisymmetric stretching mode of vibration which also gives rise to the well-known interstitial oxygen band at 1106 cm−1 (the 9-μm band). Our results are inconclusive for the 1013-cm−1 line.This publication has 6 references indexed in Scilit:
- Quantitative Spectroscopy of Interstitial Oxygen in SiliconJournal of the Electrochemical Society, 1985
- The effect of metallic contamination on enhanced oxygen diffusion in silicon at low temperaturesJournal of Physics C: Solid State Physics, 1985
- Infrared spectrum of interstitial oxygen in siliconApplied Physics Letters, 1984
- Diffusivity of oxygen in silicon at the donor formation temperatureApplied Physics Letters, 1983
- Absorption of oxygen in silicon in the near and the far infraredProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1970
- The configuration and diffusion of isolated oxygen in silicon and germaniumJournal of Physics and Chemistry of Solids, 1964