Nature and evolution of interfaces in Si/Si1-xGex superlattices
- 1 April 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (4) , 341-349
- https://doi.org/10.1007/bf02659697
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Interface roughness in Ge/Si superlatticesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Involvement of the topmost Ge layer in the Ge surface segregation during Si/Ge heterostructure formationApplied Physics Letters, 1991
- Strain relaxation kinetics in Si1−xGex/Si heterostructuresJournal of Applied Physics, 1991
- Characterization of lateral correlation length of interface roughness in MBE grown GaAs/AlAs quantum wells by mobility measurementJournal of Crystal Growth, 1991
- Thermal Degradation of SiGe Interfaces Studied by X-Ray Reflectivity and DiffractionMRS Proceedings, 1991
- Growth and characterization of SiGe atomic layer superlatticesThin Solid Films, 1989
- Ge segregation at Si/Si1−xGex interfaces grown by molecular beam epitaxyApplied Physics Letters, 1989
- Growth and characterization of Si1−xGex and Ge epilayers on (100) SiJournal of Applied Physics, 1988
- Étude des couches minces et des surfaces par réflexion rasante, spéculaire ou diffuse, de rayons XRevue de Physique Appliquée, 1976
- Surface Studies of Solids by Total Reflection of X-RaysPhysical Review B, 1954