Correlations for damage in diffused-junction InP solar cells induced by electron and proton irradiation
- 1 May 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (9) , 6013-6018
- https://doi.org/10.1063/1.364449
Abstract
The damage to diffused-junction n+-p InP solar cells induced by electron and proton irradiations over a wide range of energy from 0.5 to 3 MeV and 0.015 to 20 MeV, respectively, has been examined. The experimental electron and proton damage coefficients have been analyzed in terms of displacement damage dose, which is the product of the particle fluence and the calculated nonionizing energy loss [G. P. Summers, E. A. Burke, R. Shapiro, S. R. Messenger, and R. J. Walters, IEEE Trans. Nucl. Sci. 40, 1300 (1993).] Degradation of InP cells due to irradiation with electrons and protons with energies of more than 0.5 MeV show a single curve as a function of displacement damage dose. Based on the deep-level transient spectroscopy analysis, damage equivalence between electron and proton irradiation is discussed. InP solar cells are confirmed to be substantially more radiation resistant than Si and GaAs-on-Ge cells.This publication has 7 references indexed in Scilit:
- Mechanism for the anomalous degradation of Si solar cells induced by high fluence 1 MeV electron irradiationApplied Physics Letters, 1996
- Damage correlations in semiconductors exposed to gamma, electron and proton radiationsIEEE Transactions on Nuclear Science, 1993
- Low temperature proton irradiation of GaAs MESFETsIEEE Transactions on Nuclear Science, 1993
- Proton irradiation effects on InP solar cells fabricated from LEC-grown single crystalsSolar Energy Materials and Solar Cells, 1993
- Mechanism for radiation resistance of InP solar cellsJournal of Applied Physics, 1988
- Indium phosphide solar cells made by ion implantationApplied Physics Letters, 1988
- Radiation damage in InP single crystals and solar cellsJournal of Applied Physics, 1984