Radiative decay processes of vanadium ions in III-V compound semiconductors

Publisher Website
Google Scholar
Abstract
The infrared 3T2(F) to 3A2(F) emission transition of the substitutional V3+(d2) ion in Td symmetry is studied in GaAs, GaP, and InP host materials. The decay f this intracentre luminescence under pulsed Ar or YAG: Nd laser excitation is found to be exponential at low temperature. The derived transition probabilities are discussed in models comprising configuration interaction or covalency mixing. With GaAs:V, different decay time constants tau are measured for above band gap and intracentre excitation energies. The temperature dependence of tau is examined in the 4-300 K range and parameters are determined of a configurational coordinate model in which nonradiative transitions necessitate a thermal activation of the excited state.