CORONA-OXIDE-SEMICONDUCTOR device CHARACTERIZATION
- 1 April 1998
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 42 (4) , 505-512
- https://doi.org/10.1016/s0038-1101(97)00206-2
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Analysis of the rate of change of inversion charge in thin insulator p-type Metal-Oxide-Semiconductor structuresSolid-State Electronics, 1995
- A linear-sweep MOS-C technique for determining minority carrier lifetimesIEEE Transactions on Electron Devices, 1972
- Large-Signal Surface Photovoltage Studies with GermaniumPhysical Review B, 1958