Analysis of the rate of change of inversion charge in thin insulator p-type Metal-Oxide-Semiconductor structures
- 31 May 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (5) , 1045-1049
- https://doi.org/10.1016/0038-1101(95)98673-q
Abstract
No abstract availableKeywords
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