The effect of surface anisotropy of Si(001)2 × 1 on hollow formation in the initial stage of oxidation as studied by reflection electron microscopy
- 1 October 1989
- journal article
- Published by Elsevier in Surface Science
- Vol. 220 (1) , 131-136
- https://doi.org/10.1016/0039-6028(89)90467-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Biatomic Layer-High Steps on Si(001)2×1 SurfaceJapanese Journal of Applied Physics, 1987
- Biatomic Steps on (001) Silicon SurfacesPhysical Review Letters, 1986