The photolytic laser chemical vapor deposition rate of platinum, its dependence on wavelength, precursor vapor pressure, light intensity, and laser beam diameter
- 1 December 1990
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 46 (1-4) , 9-18
- https://doi.org/10.1016/0169-4332(90)90113-e
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Fast laser writing of copper and irisium lines from thin solid surface layers of metalorganic compoundsApplied Surface Science, 1989
- Temperature effects in the photolytic LCVD of platinumApplied Physics A, 1989
- High-speed laser chemical vapor deposition of copper: A search for optimum conditionsJournal of Applied Physics, 1989
- Searching for optimum conditions in the laser writing of small ohmic contactsApplied Physics A, 1988
- Gas phase versus surface contributions to photolytic laser chemical vapor deposition ratesApplied Physics A, 1988
- Growth rates and electrical conductivity of microscopic ohmic contacts fabricated by laser chemical vapor deposition of platinumApplied Physics A, 1987
- A review of laser–microchemical processingJournal of Vacuum Science & Technology B, 1983
- Ultraviolet photodecomposition for metal deposition: Gas versus surface phase processesApplied Physics Letters, 1983
- The bis(β‐Diketonato)Platinum(II) ComplexesPublished by Wiley ,1980
- Temperature rise induced by a laser beamJournal of Applied Physics, 1977