Defects in Neutron-Transmutation-Doped Germanium

Publisher Website
Google Scholar
Abstract
The nature of the defects produced in arsenic- or antimony-doped germanium by the recoil energy associated with capture gamma-ray emission after thermal neutron absorption was studied by measuring the Hall coefficient and the DLTS spectrum. It was concluded that the defects produced by thermal neutron irradiation are removed by annealing for 20 min at 600 K. Electron trapping levels located at E c-0.20 eV, E c-0.22 eV, E c-0.27 eV and E c-0.40 eV are formed after irradiation with thermal neutrons. The defect associated with the E c-0.22 eV level is considered to contain an interstitial arsenic atom.