Annealing effects on electrical properties of thermal neutron transmutation doped Ge

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Abstract
A neutron transmutation doping technique was applied to the high purity n-type germanium with 50 Ω cm (n=5.9×1013/cm3). For a neutron flux density of 5×1011/cm2 s and an irradiation time of 60 min, the doped Ge was converted into p type with 7 Ω cm ( p=3.5×1014/cm3). By neutron irradiation it has been possible to introduce the shallow acceptors resulting from the damage in addition to gallium atoms as acceptors. The recovery of radiation damage was evaluated by the improvements of some electrical properties for various annealing stages. By annealing at 600 °C, a room temperature hole mobility of 2200 cm2/Vs has been achieved at p=6.2×1013/cm3 and ρ=45 Ω cm. And, also, we found that higher mobility holes in p-type Ge play an important role for the weak magnetic field as the lattice atoms recover from the radiation damage. Finally, the direct observation of the recovery of damage was performed by the measurement of channeling effects using a helium ion beam.

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