Hole Mobilities of Graphoepitaxy Poly-Si Devices
- 1 February 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (2A) , L70
- https://doi.org/10.1143/jjap.22.l70
Abstract
Graphoepitaxy P-channel poly Si FETs were fabricated in 0.9 µm thick, LP-CVD poly-Si on 0.3 µm thick SiO2 on Si(100) wafer. Grooves 2, 5, 10 µm in width and 300 Å in depth were photolithographically defined on the SiO2 film. Poly-Si layers were annealed by CW-Ar laser with a power of 10 W. Field effect hole mobilities in the poly-Si FETs were in the range of 25∼110 cm2/V·sec. The grain size of graphoepitaxy laser annealed poly-Si varied from 0.7 µm to 2.5 µm. The increase of hole mobilities in poly-Si devices is attributed to the increase of grain size.Keywords
This publication has 10 references indexed in Scilit:
- Recrystallization of Si on amorphous substrates by doughnut-shaped cw Ar laser beamApplied Physics Letters, 1982
- n-channel deep-depletion metal-oxide-semiconductor field-effect transistors fabricated in zone-melting-recrystallized polycrystalline Si films on SiO2Applied Physics Letters, 1981
- Polysilicon recrystallization by CO2 laser heating of SiO2Applied Physics Letters, 1981
- Polycrystalline-silicon thin-film transistors on glassApplied Physics Letters, 1980
- Thin film MOSFET’s fabricated in laser-annealed polycrystalline siliconApplied Physics Letters, 1979
- Crystallographic orientation of silicon on an amorphous substrate using an artificial surface-relief grating and laser crystallizationApplied Physics Letters, 1979
- Transport properties of polycrystalline silicon filmsJournal of Applied Physics, 1978
- Grain Growth Mechanism of Heavily Phosphorus‐Implanted Polycrystalline SiliconJournal of the Electrochemical Society, 1978
- Deposition of Polycrystalline Silicon by Pyrolysis of Silane in ArgonJournal of the Electrochemical Society, 1975
- Hall Mobility in Chemically Deposited Polycrystalline SiliconJournal of Applied Physics, 1971