Properties of very thin thermally nitrided-SiO/sub 2//Si interface based on conductance and hot-electron injection techniques
- 1 September 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (9) , 1629-1633
- https://doi.org/10.1109/16.34223
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- The Influence of Processes on Composition of Thermally Nitrided SiO2 FilmJournal of the Electrochemical Society, 1988
- Nitridation-enhanced conductivity behavior and current transport mechanism in thin thermally nitrided SiO2Journal of Applied Physics, 1988
- Thermal Nitridation of SiO2 Thin Films on Si at 1150°CJournal of the Electrochemical Society, 1988
- Properties of SiO2 on Si after Exposure to 3:1 H 2 + N 2 and NH 3Journal of the Electrochemical Society, 1986
- Interface states and fixed charges in nanometer-range thin nitrided oxides prepared by rapid thermal annealingIEEE Electron Device Letters, 1986
- Hydrogenation during thermal nitridation of silicon dioxideJournal of Applied Physics, 1986
- Study of Electrical Characteristics on Thermally Nitrided SiO2 (Nitroxide) FilmsJournal of the Electrochemical Society, 1984
- Effect of Nitridation of Silicon Dioxide on Its Infrared SpectrumJournal of the Electrochemical Society, 1984
- The Effect of Hot Electron Injection on Interface Charge Density at the Silicon to Silicon Dioxide InterfaceJournal of the Electrochemical Society, 1980
- Determination of insulator bulk trapped charge densities and centroids from photocurrent-voltage charactersitcs of MOS structuresJournal of Applied Physics, 1976