Performance of Resolution Enhancement Technique Using Both Multiple Exposure and Nonlinear Resist
- 1 December 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (12S)
- https://doi.org/10.1143/jjap.33.6874
Abstract
We have proposed a resolution enhancement lithography technique named NOLMEX. In this paper, we investigate the performance of this method by using the analytical relationship between line-and-space pattern resolution and N A, and by numerical calculation for isolated hole patterns. It is confirmed that this technique is useful for both kinds of patterns. Using the NOLMEX method, a 0.1-µ m-rule pattern can be fabricated by optical lithography.Keywords
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