10 GHz bandwidth monolithic p-i-n modulation-doped field effect transistor photoreceiver
- 11 October 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (15) , 2115-2116
- https://doi.org/10.1063/1.110557
Abstract
A photoreceiver circuit using an InGaAs p‐i‐n photodiode and InGaAs/InAlAs pseudomorphic modulation‐doped field effect transistor (MODFET) based preamplifier has been fabricated. The 18 μm diam photodiode has a bandwidth of 29 GHz and the ft and fmax of the MODFET are 26 and 30 GHz, respectively. The photoreceiver circuits have bandwidths of 10 GHz and 17 dB gain. The sensitivity at 2.5 Gb/s is −26.4 dBm.Keywords
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