Monolithically integrated InGaAs-P-I-N InP-MISFET PINFET grown by chloride vapor phase epitaxy
- 1 June 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 1 (6) , 123-125
- https://doi.org/10.1109/68.36009
Abstract
The authors report the preparation and performance of a monolithically integrated InGaAs p-i-n detector InP metal-insulator-semiconductor field-effect transistor (PINFET) receiver. The device was grown by two-step chloride vapor-phase epitaxy. The sensitivity of the receiver was measured as -33.9 and -25.4 dBm at 200 and 600 Mb/s, respectively, at a bit-error-rate of 10/sup -9/ and a wavelength of 1.55 mu m. It is noted that the performance of the PINFET receiver is currently limited by the thermal noise of the load resistance R/sub L/, which is 5 k Omega .Keywords
This publication has 6 references indexed in Scilit:
- High-speed enhancement-mode InP MISFET's grown by chloride vapor-phase epitaxyIEEE Transactions on Electron Devices, 1989
- Monolithic integration of InGaAs p-i-n photodetector with full ion-implanted InP JFET amplifierIEEE Electron Device Letters, 1988
- High-speed monolithic GaInAs pin FETElectronics Letters, 1988
- High-speed operation of InP metal-insulator-semiconductor field-effect transistors grown by chloride vapor phase epitaxyApplied Physics Letters, 1987
- Monolithic photoreceiver integrating GaInAs PIN/JFET with diffused junctionsElectronics Letters, 1987
- Monolithically integrated In 0.53 Ga 0.47 As-PIN/InP-MISFET photoreceiverElectronics Letters, 1984