Monolithic integration of InGaAs p-i-n photodetector with full ion-implanted InP JFET amplifier
- 1 September 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (9) , 447-449
- https://doi.org/10.1109/55.6941
Abstract
A monolithically integrated p-i-n FET amplifier, fabricated using ion-planted indium-phosphide (InP) JFETs, is described. The vertically integrated structure consists of a vapor-phase epitaxy (VPE)-grown InGaAs photoabsorption layer and a metal-organic-chemical-vapor-disposition (MOCVD)-grown Fe-doped semi-insulating layer. A Zn diffusion was performed to complete the p-i-n photodiode. High-performance fully implanted InP JFETS were used to form the integrated amplifier with a symmetrical design to remove the DC offset. With a receiver sensitivity of -36.4 dBm measured at 200 Mb/s NRZ for 10/sup -9/ BER, it is thought to be the most sensitive monolithic p-i-n FET preamp yet reported in this frequency range. The p-i-n amplifier has a dynamic range of 15 dB.Keywords
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