The effect of gas temperature on the growth of InP by atomspheric pressure metal-organic chemical vapor deposition using trimethyl indium and PH3 sources
- 1 September 1985
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 14 (5) , 563-572
- https://doi.org/10.1007/bf02654025
Abstract
No abstract availableKeywords
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