High-speed operation of InP metal-insulator-semiconductor field-effect transistors grown by chloride vapor phase epitaxy

5 October 1987

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 51 (14) , 1097-1099
https://doi.org/10.1063/1.98752

Abstract

We report the millimeter-wave performance of enhancement mode InP metal-insulator-semiconductor field-effect transistors grown by chloride vapor phase epitaxy. For a gate length of 1 μm we have measured a current gain cutoff frequency of 29 GHz and an electron velocity of 2.5×107 cm/s, close to a theoretical current gain cutoff frequency of 40 GHz. This represents the fastest InP-based field-effect transistor ever demonstrated, and surpasses state-of-the-art AlGaAs/GaAs modulation-doped field-effect transistors having similar gate length.

Keywords

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