Ellipsometric characterization of the glassy layer at metal/semiconductor interfaces
- 30 June 1980
- journal article
- Published by Elsevier in Surface Science
- Vol. 96 (1-3) , 346-356
- https://doi.org/10.1016/0039-6028(80)90312-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- High-fluence implantations of silicon: Layer thickness and refractive indicesJournal of Applied Physics, 1979
- Investigation of ion-implanted GaP layers by ellipsometryJournal of Applied Physics, 1977
- Effect of a glassy membrane on the Schottky barrier between silicon and metallic silicidesJournal of Vacuum Science and Technology, 1977
- On the problems of multiple overlayers in ellipsometry and a new look at multiple angle of incidence ellipsometrySurface Science, 1976
- Implications of three parameter solutions to the three-layer modelSurface Science, 1976
- Complex refractive index and phosphorus concentration profiles in P+31 ion implanted silicon by ellipsometry and auger electron spectroscopySurface Science, 1976