OMVPE growth and characterization of Al Ga1−P(0≤x≤1) using tertiarybutylphosphine
- 1 March 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 129 (1-2) , 289-296
- https://doi.org/10.1016/0022-0248(93)90460-e
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 28 references indexed in Scilit:
- Reduction of carbon contamination in triethylphosphorus OMVPE GaP layers by Pt/Al2O3 catalystJournal of Crystal Growth, 1991
- Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate LayersJapanese Journal of Applied Physics, 1990
- Characterization of InP Grown by OMVPE Using Tertiary-butylphosphine for the Phosphorous SourceJapanese Journal of Applied Physics, 1990
- OMVPE growth mechanism for GaP using tertiarybutylphosphine and trimethylgalliumJournal of Crystal Growth, 1989
- The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS StructuresJapanese Journal of Applied Physics, 1988
- Organometallic Vapor-Phase Epitaxy of GaAs Using Triethylarsenic as Arsenic SourceJapanese Journal of Applied Physics, 1988
- Optical properties and indirect-to-direct transition of GaP/AlP (001) superlatticesPhysical Review B, 1988
- The preparation of device quality gallium phosphide by metal organic chemical vapor depositionJournal of Crystal Growth, 1982
- Double-crystal spectrometer measurements of lattice parameters and X-ray topography on heterojunctions GaAs–AlxGa1−xAsActa Crystallographica Section A, 1976
- Donor-Acceptor Pair and Bound Exçiton Recombination in Epitaxially Grown AlxGa1−xPPhysica Status Solidi (a), 1974