Growth of columnar aluminum nitride layers on Si(111) by molecular beam epitaxy
- 1 December 1997
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 50 (1-3) , 228-232
- https://doi.org/10.1016/s0921-5107(97)00168-2
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiCJournal of Crystal Growth, 1997
- Growth of GaNAlN and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminiumJournal of Crystal Growth, 1997
- Substrate Effects on the Epitaxial Growth of AlN Thin Films Using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor DespositionJapanese Journal of Applied Physics, 1996
- Aluminum nitride films on different orientations of sapphire and siliconJournal of Applied Physics, 1996
- GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layersApplied Physics Letters, 1995
- Microstructure of GaN epitaxy on SiC using AlN buffer layersApplied Physics Letters, 1995
- Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layersApplied Physics Letters, 1994
- High quality aluminum nitride epitaxial layers grown on sapphire substratesApplied Physics Letters, 1994
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Reflection high energy electron diffraction and X-ray studies of AlN films grown on Si(111) and Si(001) by organometallic chemical vapour depositionThin Solid Films, 1984