InAs/AlSb quantum-cascade light-emitting devices in the 3–5 μm wavelength region
- 19 February 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (8) , 1029-1031
- https://doi.org/10.1063/1.1348316
Abstract
Midinfrared (3.7–5.3 μm) electroluminescent devices based on a quantum-cascade (QC) design have been demonstrated using InAs/AlSb heterostructures, grown on GaSb substrates. The very high conduction band discontinuity (>2 eV) of this material system allows the design of QC devices at very short wavelengths. Well-resolved luminescence peaks were observed up to 300 K, with a full-width-at-half-maximum to peak wavelength ratio (Δλ/λ) of the order of 8%. The emission wavelengths are in good agreement with the results of our model. The emitted optical power is lower than that predicted, due to a nonoptimized electron injection into the active region.Keywords
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