Zn-diffused back-illuminated p-i-n photodiodes in InGaAs/InP grown by molecular-beam epitaxy
- 15 October 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (8) , 730-731
- https://doi.org/10.1063/1.92061
Abstract
Epitaxial films of In0.53Ga0.47As lattice‐matched to InP substrates have been grown by molecular beam epitaxy (MBE). The carrier concentrations were as low as 3×1015 cm−3. High‐speed back‐illuminated PIN photodiodes for use at 0.95–1.6 μm wavelength were made from the resulting layers.Keywords
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