A new, efficient approach to the large-scale thermal modeling of III-V devices and integrated circuits
- 1 January 1993
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Three-dimensional computation of the thermal parameters of multiple-gate power FETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- A self-consistent DC-AC two dimensional electrothermal model for GaAlAs/GaAs microwave power HBTsIEEE Transactions on Electron Devices, 1993
- Thermal modeling of power gallium arsenide microwave integrated circuitsIEEE Transactions on Electron Devices, 1993
- Theoretical calculations of temperature and current profiles in multi-finger heterojunction bipolar transistorsSolid-State Electronics, 1993
- Modeling temperature effects in the DC I-V characteristics of GaAs MESFET'sIEEE Transactions on Electron Devices, 1993
- Thermal resistance of gallium-arsenide field-effect transistorsIEE Proceedings G Circuits, Devices and Systems, 1989
- Semiconducting and other major properties of gallium arsenideJournal of Applied Physics, 1982
- Thermal resistance of GaAs field-effect transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- Thermal resistance of heat sinks with temperature-dependent conductivitySolid-State Electronics, 1975
- Thermal analysis of multiple-layer structuresIEEE Transactions on Electron Devices, 1974