In Situ Parametric Investigation of the Mechanism of Diamond Film Deposition from Low Energy Ion Beams
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
A general scheme for the analysis of deposition from hyperthermal (10–5000 eV) species is presented. Successful deposition involves consideration of species range, maximum local concentration obtainable, trapping efficiency, radiation damage, and sputtering efficiency. Examples of in situ parametric investigations of carbon deposition performed with a controlled mass selected UHV ion beam facility are presented. A subplantation model for diamond film deposition is discussed. XRD evidence for epitaxial growth of diamond(111) on Si(111) is provided.Keywords
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