Temperature sensitivity of ion-implanted MOS capacitors

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Abstract
The temperature sensitivity of ion-implanted MOS capacitors has been studied. The results show that the damage due to the implantation process results in a frequency-dependent temperature sensitivity. The range over which the temperature sensitivity occurs can be varied by changing both the implanted dose and energy. Since the phenomena is due to damage, postimplant annealing will reduce or eliminate the temperature sensitivity depending on the annealing time and temperature. Temperature sensitivities on the order of 2.5%/°C have been measured.