The influence of Ge grading on the bias and temperature characteristics of SiGe HBTs for precision analog circuits
- 1 January 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (2) , 292-298
- https://doi.org/10.1109/16.822270
Abstract
No abstract availableKeywords
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