Rectangular and L-shaped GaAs/AlGaAs lasers with very high quality etched facets
- 6 February 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (6) , 493-495
- https://doi.org/10.1063/1.100960
Abstract
GaAs/AlGaAs semiconductor lasers with very high quality etched facets have been fabricated. Laser facets are formed by the chemically assisted ion beam etching technique with SiO2 as the etch mask. The threshold current densities of lasers produced with this technique are almost identical to comparable lasers with one etched and one cleaved facet. L-shaped lasers, which make use of total internal reflection, have also been fabricated. The threshold current density of L-shaped lasers is similar to that of rectangular lasers with comparable cavity length.Keywords
This publication has 11 references indexed in Scilit:
- Masking Considerations in Chemically Assisted Ion Beam Etching of GaAs / AlGaAs Laser StructuresJournal of the Electrochemical Society, 1989
- High-efficiency superlattice graded-index separate confining heterostructure lasers with AlGaAs single quantum wellsApplied Physics Letters, 1988
- One-step two-level etching technique for monolithic integrated opticsApplied Physics Letters, 1987
- Nonselective etching of GaAs/AlGaAs double heterostructure laser facets by Cl2 reactive ion etching in a load-locked systemApplied Physics Letters, 1987
- High-power AlGaAs/GaAs single quantum well lasers with chemically assisted ion beam etched mirrorsApplied Physics Letters, 1987
- Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasersApplied Physics Letters, 1986
- Monolithic GaAs/AlGaAs diode laser/deflector devices for light emission normal to the surfaceApplied Physics Letters, 1986
- Homogeneous gain saturation in GaAs/AlGaAs quantum well lasersApplied Physics Letters, 1985
- GaAs and AlGaAs anisotropic fine pattern etching using a new reactive ion beam etching systemJournal of Vacuum Science & Technology B, 1985
- Contrast enhanced photolithographyIEEE Electron Device Letters, 1983