Temperature dependence of emitter-base reverse stress degradation and its mechanism analyzed by MOS structures
- 13 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Junction degradation in bipolar transistors and the reliability imposed constraints to scaling and designIEEE Transactions on Electron Devices, 1988
- Modeling hot-carrier effects in polysilicon emitter bipolar transistorsIEEE Transactions on Electron Devices, 1988
- Poly emitter bipolar hot carrier effects in an advanced BiCMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987