Peierls-Nabarro model of dislocations in silicon with generalized stacking-fault restoring forces
- 1 September 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (9) , 5890-5898
- https://doi.org/10.1103/physrevb.50.5890
Abstract
Using generalized stacking-fault (gsf) energies obtained from first-principles density-functional calculations, a zero-temperature model for dislocations in silicon is constructed within the framework of a Peierls-Nabarro (PN) model. Core widths, core energies, PN pinning energies, and stresses are calculated for various possible perfect and imperfect dislocations. Both shuffle and glide sets are considered. 90° partials are shown to have a lower Peierls stress than the 30° partials in accord with experiment.Keywords
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