Dislocation core studies in empirical silicon models
- 15 February 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (6) , 5143-5146
- https://doi.org/10.1103/physrevb.43.5143
Abstract
Several modern empirical potentials for silicon are used to calculate the configurations and energies of dislocation cores and their mobility-related excitations. The degree of consistency with experiment is found to vary systematically with the magnitude of the defect distortion. The results suggest that the distorted structures encountered with this important class of defects should be incorporated into the construction of the potentials.Keywords
This publication has 28 references indexed in Scilit:
- The dislocation core in crystalline materialsCritical Reviews in Solid State and Materials Sciences, 1991
- New classical potential for accurate simulation of atomic processes in SiPhysical Review B, 1988
- Dislocation core effects in plasticityRevue de Physique Appliquée, 1988
- Dislocations and plasticity in semiconductors. I — Dislocation structures and dynamicsRevue de Physique Appliquée, 1987
- Dislocation cores in semiconductors. From the « shuffle or glide » dispute to the « glide and shuffle » partnershipRevue de Physique Appliquée, 1987
- Microscopic Theory of Atomic Diffusion Mechanisms in SiliconPhysical Review Letters, 1984
- STRUCTURE AND ENERGY LEVELS OF DISLOCATIONS IN SILICONLe Journal de Physique Colloques, 1983
- Structure and Energy Levels of the Glide 60° Partial in SiliconPhysica Status Solidi (b), 1980
- On the Core Structure of the Glide‐Set 90° and 30° Partial Dislocations in SiliconPhysica Status Solidi (b), 1980
- Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond StructurePhysical Review B, 1966