Surface segregation and growth interface roughening in AlxGa1-xAs
- 1 March 1987
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (3) , 179-181
- https://doi.org/10.1088/0268-1242/2/3/009
Abstract
By using complementary X-ray photo-electron spectroscopy and reflection high-energy electron diffraction in situ investigations, it is demonstrated that a surface segregation effect arises in the molecular-beam epitaxy of AlxGa1-xAs. This phenomenon is shown to be correlated with growth interface roughening observed for this material.Keywords
This publication has 23 references indexed in Scilit:
- Investigation of surface roughness of molecular beam epitaxy Ga1−xAlxAs layers and its consequences on GaAs/Ga1−xAlxAs heterostructuresJournal of Vacuum Science & Technology B, 1985
- Morphology of GaAs and AlxGa1−xAs grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1985
- Electron spectroscopy of vacuum annealing effects on surfaces of some binary and ternary III–V semiconductorsJournal of Vacuum Science & Technology B, 1985
- Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1984
- Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAsJournal of Applied Physics, 1983
- Growth of Al 0.3 Ga 0.7 As by molecular beam epitaxy in the forbidden temperature range using As 2Electronics Letters, 1983
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- Extrinsic layer at AlxGa1−xAs-GaAs interfacesApplied Physics Letters, 1982
- Influence of Substrate Temperature on the Morphology of Al x Ga1 − x As Grown by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1982
- Hartree-Slater subshell photoionization cross-sections at 1254 and 1487 eVJournal of Electron Spectroscopy and Related Phenomena, 1976