Effect of Al mole fraction on carrier diffusion lengths and lifetimes in AlxGa1−xAs
- 18 December 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (25) , 2622-2624
- https://doi.org/10.1063/1.101955
Abstract
The ambipolar diffusion length and carrier lifetime are measured in AlxGa1−xAs for several mole fractions in the interval 0<x<0.38. These parameters are found to have significantly higher values in the higher mole fraction samples. These increases are attributed to occupation of states in the indirect valleys, and supporting calculations are presented.Keywords
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