Transferred substrate Schottky-collector heterojunction bipolar transistors: first results and scaling laws for high f/sub max/
- 1 August 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (8) , 357-359
- https://doi.org/10.1109/55.400737
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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