Spin Polarization Dependent Far Infrared Absorption in Ga1-xMnxAs
- 1 November 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (11R) , 6231
- https://doi.org/10.1143/jjap.40.6231
Abstract
Infrared and far infrared transmission spectra have been measured for the ferromagnetic Ga1-x MnxAs (x=0.034 and x=0.050) between 10 and 12000 cm-1. A broad peak is observed around 1600 cm-1, and this energy is close to the deep acceptor level of Mn impurity in GaAs. A finite featureless absorption, spreading between this peak and the band gap, due to inter valence band transitions is also observed. At the same time, a non-zero absorption is observed in the lowest frequency studied, which points to the absorption by mobile holes related to the metallic DC conductivity. The frequency dependence in this range, which differs markedly from the Drude model, demonstrates a strong influence of electrostatic and magnetic disorder on the optical conductivity. In particular, the existence of a strong coupling between the Mn spins and the holes explains the considerable increase of the far infrared absorption below the ferromagnetic ordering temperature.Keywords
This publication has 21 references indexed in Scilit:
- Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductorsPhysical Review B, 2001
- Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic SemiconductorsScience, 2000
- Electronic structure of the GaAs:scenterPhysical Review B, 1997
- Magnetotransport properties ofp-type (In,Mn)As diluted magnetic III-V semiconductorsPhysical Review Letters, 1992
- Long-Running-Time (T=0.45 K) Germanium Bolometer for Far Infrared SpectroscopyJapanese Journal of Applied Physics, 1990
- Diluted magnetic III-V semiconductorsPhysical Review Letters, 1989
- Optical-transition cross sections involving impurities in semiconductorsPhysical Review B, 1982
- Optical study of interacting donors in semiconductorsPhysical Review B, 1981
- Application of the Quantum-Defect Method to Optical Transitions Involving Deep Effective-Mass-Like Impurities in SemiconductorsPhysical Review B, 1969
- Photoexcitation and Photoionization of Neutral Manganese Acceptors in Gallium ArsenidePhysical Review Letters, 1967